An electronic discharge (ESD) protection circuit for protecting an integrated circuit chip from an ESD event. The ESD protection circuit includes a stack of BigFETs, a BigFET gate driver for driving the gates of the BigFETs and a triggering the BigFET gate driver to drive the gates of the BigFETs in response to an ESD event. The BigFET gate driver includes gate pull-up circuitry for pulling up the gate of a lower one of the BigFETs. The gate pull-up circuitry is configured so as to obviate the need for a diffusion contact between the stacked BigFETs, resulting in a significant savings in terms of the chip area needed to implement the ESD protection circuit.