Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US11816655Application Date: 2006-03-01
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Publication No.: US07782585B2Publication Date: 2010-08-24
- Inventor: Mikiya Doi , Hiroki Takeuchi
- Applicant: Mikiya Doi , Hiroki Takeuchi
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Fish & Richardson P.C.
- Priority: JP2005-056792 20050302
- International Application: PCT/JP2006/303903 WO 20060301
- International Announcement: WO2006/093204 WO 20060908
- Main IPC: H02H5/00
- IPC: H02H5/00

Abstract:
An overheat protection circuit 1 of a semiconductor integrated circuit device of the invention has filter means for removing a high frequency component from a power supply voltage Vcc. Specifically, the overheat protection circuit 1 has: a band gap power supply portion BG and resistors R1 and R2 that produce a reference voltage Vref; a transistor N1 for temperature detection; resistors R3 and R4 that generate, from the power supply voltage Vcc, a control signal Sctrl according to the on/off state of the transistor N1; a transistor P1 that is turned on/off according to the control signal Sctrl; and a transistor N2 and resistors R5 and R6 that generate an overheat protection signal Stsd according to the on/off state of the transistor P1. In addition, the overheat protection circuit 1 has, as the filter means, a resistor R7 and a capacitor C1 that are respectively connected to the emitter and the collector of the transistor P1. This makes it possible to perform a high-accuracy overheat protection operation despite variations in power supply voltage (superimposition of pulse).
Public/Granted literature
- US20090027820A1 Semiconductor Integrated Circuit Device Public/Granted day:2009-01-29
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