Invention Grant
US07782585B2 Semiconductor integrated circuit device 失效
半导体集成电路器件

  • Patent Title: Semiconductor integrated circuit device
  • Patent Title (中): 半导体集成电路器件
  • Application No.: US11816655
    Application Date: 2006-03-01
  • Publication No.: US07782585B2
    Publication Date: 2010-08-24
  • Inventor: Mikiya DoiHiroki Takeuchi
  • Applicant: Mikiya DoiHiroki Takeuchi
  • Applicant Address: JP Kyoto
  • Assignee: Rohm Co., Ltd.
  • Current Assignee: Rohm Co., Ltd.
  • Current Assignee Address: JP Kyoto
  • Agency: Fish & Richardson P.C.
  • Priority: JP2005-056792 20050302
  • International Application: PCT/JP2006/303903 WO 20060301
  • International Announcement: WO2006/093204 WO 20060908
  • Main IPC: H02H5/00
  • IPC: H02H5/00
Semiconductor integrated circuit device
Abstract:
An overheat protection circuit 1 of a semiconductor integrated circuit device of the invention has filter means for removing a high frequency component from a power supply voltage Vcc. Specifically, the overheat protection circuit 1 has: a band gap power supply portion BG and resistors R1 and R2 that produce a reference voltage Vref; a transistor N1 for temperature detection; resistors R3 and R4 that generate, from the power supply voltage Vcc, a control signal Sctrl according to the on/off state of the transistor N1; a transistor P1 that is turned on/off according to the control signal Sctrl; and a transistor N2 and resistors R5 and R6 that generate an overheat protection signal Stsd according to the on/off state of the transistor P1. In addition, the overheat protection circuit 1 has, as the filter means, a resistor R7 and a capacitor C1 that are respectively connected to the emitter and the collector of the transistor P1. This makes it possible to perform a high-accuracy overheat protection operation despite variations in power supply voltage (superimposition of pulse).
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