Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12243667Application Date: 2008-10-01
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Publication No.: US07782657B2Publication Date: 2010-08-24
- Inventor: Masashi Fujita , Yoshiyuki Kurokawa
- Applicant: Masashi Fujita , Yoshiyuki Kurokawa
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell Sanders LLP
- Priority: JP2005-220887 20050729
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C5/06

Abstract:
A cache memory having valid bits, where a circuit configuration in a memory cell of a valid bit is improved so as to perform invalidation at high speed. The invention provides a cache memory including a memory cell that has a function to perform invalidation at high speed. One mode of the invention is a semiconductor device including a memory cell of a valid bit, where two inverters are connected in series to form a loop, a drain of an N-channel transistor is connected to an output signal line of one of the inverters, a gate thereof is connected to a reset signal line of a CPU, and a source thereof is connected to a ground line. The initial value of the memory cell is determined by inputting a reset signal of the CPU to the gate.
Public/Granted literature
- US20090116278A1 Semiconductor Device Public/Granted day:2009-05-07
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