Invention Grant
- Patent Title: NAND memory device column charging
- Patent Title (中): NAND存储器设备列充电
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Application No.: US12246289Application Date: 2008-10-06
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Publication No.: US07782677B2Publication Date: 2010-08-24
- Inventor: Frankie F. Roohparvar
- Applicant: Frankie F. Roohparvar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
Embodiments of NAND Flash memory devices and methods recognize that effective column coupling capacitance can be reduced by maintaining a sourced voltage on adjacent columns of an array. Maintaining the columns in a charged state prior to array operations (read, write, and program) reduces current surges and improves data read timing. Devices and methods charge the array columns at pre-charge and following array access operations.
Public/Granted literature
- US20090034331A1 NAND MEMORY DEVICE COLUMN CHARGING Public/Granted day:2009-02-05
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