Invention Grant
- Patent Title: Memory device and reading method
- Patent Title (中): 内存设备和阅读方式
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Application No.: US11958375Application Date: 2007-12-17
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Publication No.: US07782679B2Publication Date: 2010-08-24
- Inventor: In Suk Yun
- Applicant: In Suk Yun
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2007-0064394 20070628
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C7/02
Abstract:
A memory device according to an embodiment of the present invention, comprises a common source line current detection unit for detecting current in a common source line of a memory cell array and outputting a control signal; and a control unit for controlling an evaluation time for reading data of a page buffer coupled to the memory cell array according to the control signal output from the common source line current detection unit.
Public/Granted literature
- US20090003076A1 MEMORY DEVICE AND READING METHOD Public/Granted day:2009-01-01
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