Invention Grant
- Patent Title: Refresh signal generator of semiconductor memory device
- Patent Title (中): 半导体存储器件的刷新信号发生器
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Application No.: US11966838Application Date: 2007-12-28
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Publication No.: US07782698B2Publication Date: 2010-08-24
- Inventor: Tae-Kyun Kim
- Applicant: Tae-Kyun Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Law Firm PLC
- Priority: KR10-2007-0034208 20070406
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A refresh signal generator generates an internal refresh signal to conduct a refresh with an interval controlled based on PVT fluctuations. The refresh signal generator includes a temperature sensing unit for sensing an internal temperature and activating a corresponding signal of a plurality of temperature sensing signals in response to a temperature sense driving signal, a power supply selecting unit for driving a driving voltage supply terminal to one of different voltage levels according to the plurality of temperature sensing signals, and an internal refresh signal generating unit for receiving a driving voltage from the power supply selecting unit and producing internal refresh signals at a constant interval.
Public/Granted literature
- US20080247256A1 REFRESH SIGNAL GENERATOR OF SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2008-10-09
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