Invention Grant
- Patent Title: Discrete trap non-volatile multi-functional memory device
- Patent Title (中): 离散陷阱非易失性多功能存储设备
-
Application No.: US12212970Application Date: 2008-09-18
-
Publication No.: US07786516B2Publication Date: 2010-08-31
- Inventor: Arup Bhattacharyya
- Applicant: Arup Bhattacharyya
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze P.A.
- Main IPC: H01L29/80
- IPC: H01L29/80
Abstract:
A multiple layer tunnel insulator is fabricated between a substrate and a discrete trap layer. The properties of the multiple layers determines the volatility of the memory device. The composition of each layer and/or the quantity of layers is adjusted to fabricate either a DRAM device, a non-volatile memory device, or both simultaneously.
Public/Granted literature
- US20090014780A1 DISCRETE TRAP NON-VOLATILE MULTI-FUNCTIONAL MEMORY DEVICE Public/Granted day:2009-01-15
Information query
IPC分类:
