Invention Grant
- Patent Title: Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus
- Patent Title (中): 半导体装置，半导体装置的制造方法以及电子装置
-
Application No.: US12012182Application Date: 2008-01-31
-
Publication No.: US07786576B2Publication Date: 2010-08-31
- Inventor: Taimei Kodaira
- Applicant: Taimei Kodaira
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: AdvantEdge Law Group, LLC
- Priority: JP2007-026466 20070206
- Main IPC: H01L23/04
- IPC: H01L23/04
Abstract:
A semiconductor device includes a substrate having a resin layer on at least a surface thereof; a thin-film circuit layer provided on the substrate, and a reinforcing section provided on the surface of the substrate so as to surround the thin-film circuit layer.
Public/Granted literature
- US20080185689A1 Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus Public/Granted day:2008-08-07
Information query
IPC分类:
