Invention Grant
US07786837B2 Semiconductor power device having a stacked discrete inductor structure
有权
具有层叠离散电感器结构的半导体功率器件
- Patent Title: Semiconductor power device having a stacked discrete inductor structure
- Patent Title (中): 具有层叠离散电感器结构的半导体功率器件
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Application No.: US11818219Application Date: 2007-06-12
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Publication No.: US07786837B2Publication Date: 2010-08-31
- Inventor: François Hébert
- Applicant: François Hébert
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Agency: Schein & Cai LLP
- Agent Jingming Cai
- Main IPC: H01F5/00
- IPC: H01F5/00 ; H01F27/06 ; H01F27/02 ; H01F27/29 ; H01L23/48 ; G05F1/00

Abstract:
A power device includes a discrete inductor having contacts formed on a first surface of the discrete inductor and at least one semiconductor component mounted on the first surface of the discrete inductor and coupled to the contacts. The discrete inductor further includes contacts formed on a second surface opposite the first surface and routing connections connecting the first surface contacts to corresponding second surface contacts. The semiconductor components may be flip chip mounted onto the discrete inductor contacts or wire bonded thereto.
Public/Granted literature
- US20080309442A1 Semiconductor power device having a stacked discrete inductor structure Public/Granted day:2008-12-18
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