Invention Grant
US07787280B2 Electric element, memory device, and semiconductor integrated circuit
有权
电子元件，存储器件和半导体集成电路
- Patent Title: Electric element, memory device, and semiconductor integrated circuit
- Patent Title (中): 电子元件，存储器件和半导体集成电路
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Application No.: US11918361Application Date: 2006-04-04
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Publication No.: US07787280B2Publication Date: 2010-08-31
- Inventor: Satoru Mitani , Koichi Osano , Shunsaku Muraoka , Kumio Nago
- Applicant: Satoru Mitani , Koichi Osano , Shunsaku Muraoka , Kumio Nago
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-114093 20050412
- International Application: PCT/JP2006/307114 WO 20060404
- International Announcement: WO2006/109622 WO 20061019
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
An electric element includes a first terminal (1), a second terminal (3), and a variable-resistance film (2). The variable-resistance film (2) is connected between the first terminal (1) and the second terminal (3). The variable-resistance film (2) includes Fe3O4 crystal phase and Fe2O3 crystal phase.
Public/Granted literature
- US20090067214A1 Electric element, memory device, and semiconductor integrated circuit Public/Granted day:2009-03-12
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