Invention Grant
- Patent Title: Flash memory device using double patterning technology and method of manufacturing the same
- Patent Title (中): 使用双重图案化技术的闪存器件及其制造方法
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Application No.: US11590207Application Date: 2006-10-31
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Publication No.: US07787301B2Publication Date: 2010-08-31
- Inventor: Doo-youl Lee , Han-ku Cho , Suk-joo Lee , Gi-sung Yeo , Cha-won Koh , Pan-suk Kwak
- Applicant: Doo-youl Lee , Han-ku Cho , Suk-joo Lee , Gi-sung Yeo , Cha-won Koh , Pan-suk Kwak
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2006-0091346 20060920
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
Provided are a flash memory device and a method of manufacturing the same. The flash memory device includes strings. Each of the strings has a string selection line, a ground selection line, and an odd number of word lines formed between the string selection line and the ground selection line.
Public/Granted literature
- US20080067550A1 Flash memory device using double patterning technology and method of manufacturing the same Public/Granted day:2008-03-20
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