Invention Grant
US07787306B2 Nonvolatile semiconductor memories for preventing read disturbance and reading methods thereof
有权
用于防止读取干扰的非易失性半导体存储器及其读取方法
- Patent Title: Nonvolatile semiconductor memories for preventing read disturbance and reading methods thereof
- Patent Title (中): 用于防止读取干扰的非易失性半导体存储器及其读取方法
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Application No.: US12172904Application Date: 2008-07-14
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Publication No.: US07787306B2Publication Date: 2010-08-31
- Inventor: Jung-Hoon Park , Sung-Soo Lee , Young-Ho Lim , Chang-Sub Lee , Ki-Tae Park
- Applicant: Jung-Hoon Park , Sung-Soo Lee , Young-Ho Lim , Chang-Sub Lee , Ki-Tae Park
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2007-0070667 20070713
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
A method of reading a flash memory device can include driving a selected word line by applying a selection voltage thereto and driving unselected word lines by applying a first voltage thereto, driving the unselected word lines and first and second selection lines by applying a second voltage that is higher than the first voltage thereto, and reading data from a memory cell that is coupled to the selected word line.
Public/Granted literature
- US20090052257A1 NONVOLATILE SEMICONDUCTOR MEMORIES FOR PREVENTING READ DISTURBANCE AND READING METHODS THEREOF Public/Granted day:2009-02-26
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