Invention Grant
- Patent Title: Method for producing trichlorosilane and method for producing polycrystalline silicon
- Patent Title (中): 三氯硅烷的制造方法及多晶硅的制造方法
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Application No.: US12203395Application Date: 2008-09-03
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Publication No.: US07790132B2Publication Date: 2010-09-07
- Inventor: Takaaki Shimizu , Kyoji Oguro
- Applicant: Takaaki Shimizu , Kyoji Oguro
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-229859 20070905
- Main IPC: C01B33/107
- IPC: C01B33/107 ; C01B33/023 ; B01D53/44 ; B01D53/72

Abstract:
The present invention includes a step of separating an effluent produced in a hydrogenation step of making tetrachlorosilane (STC) react with hydrogen into trichlorosilane (TCS), into a chlorosilane fraction containing a hydrocarbon and a TCS fraction, and a chlorination step of making the chlorosilane fraction containing the hydrocarbon react with chlorine to form STC and a substance containing a chlorinated hydrocarbon, wherein the effluent containing STC produced in the chlorination step is circulated to the hydrogenation step. In the chlorination step, the chlorosilane fraction containing a hydrocarbon (capable of containing hyper-hydrogenated chlorosilanes) having a boiling point close to TCS is hyper-chlorinated to be converted and acquire a higher boiling point, which facilitates the hyper-chlorinated chlorosilanes and the hyper-chlorinated hydrocarbons to be separated into high concentration, and increases the purity of TCS to be finally obtained.
Public/Granted literature
- US20090060820A1 METHOD FOR PRODUCING TRICHLOROSILANE AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON Public/Granted day:2009-03-05
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