Invention Grant
- Patent Title: Metal chloride seeded growth of electronic and optical materials
- Patent Title (中): 金属氯化物种子生长的电子和光学材料
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Application No.: US12022178Application Date: 2008-01-30
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Publication No.: US07790230B2Publication Date: 2010-09-07
- Inventor: Michael A Mastro , Jaime A. Freitas , Charles R. Eddy, Jr. , Jihyun Kim
- Applicant: Michael A Mastro , Jaime A. Freitas , Charles R. Eddy, Jr. , Jihyun Kim
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Secretary of the Navy
- Current Assignee: The United States of America as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agent Amy L. Ressing; Joseph T. Grunkemeyer
- Main IPC: C23C16/08
- IPC: C23C16/08
Abstract:
A method of deposition by: depositing a metal halide on a substrate; providing a vapor that forms a material by way of chemical vapor deposition; heating the metal halide to a temperature at or above the melting point of the metal halide and at or below the melting point of the material; and contacting the metal halide with the vapor to cause growth on the substrate of a solid solution of the metal halide in the material. The metal is a rare earth metal or a transition metal.
Public/Granted literature
- US20090191339A1 METAL CHLORIDE SEEDED GROWTH OF ELECTRONIC AND OPTICAL MATERIALS Public/Granted day:2009-07-30
Information query
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