Invention Grant
- Patent Title: R-Fe-B based thin film magnet and method for preparation thereof
- Patent Title (中): R-Fe-B系薄膜磁铁及其制备方法
-
Application No.: US10593624Application Date: 2005-03-23
-
Publication No.: US07790300B2Publication Date: 2010-09-07
- Inventor: Shunji Suzuki , Kenichi Machida , Eiji Sakaguchi , Kazuya Nakamura
- Applicant: Shunji Suzuki , Kenichi Machida , Eiji Sakaguchi , Kazuya Nakamura
- Applicant Address: JP Saitama JP Tokyo JP Tokyo
- Assignee: Japan Science and Technology Agency,Hitachi Metals, Ltd.,Namiki Precision Jewel Co., Ltd.
- Current Assignee: Japan Science and Technology Agency,Hitachi Metals, Ltd.,Namiki Precision Jewel Co., Ltd.
- Current Assignee Address: JP Saitama JP Tokyo JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2004-085806 20040323
- International Application: PCT/JP2005/005183 WO 20050323
- International Announcement: WO2005/091315 WO 20050929
- Main IPC: B32B15/00
- IPC: B32B15/00

Abstract:
An R—Fe—B based thin film magnet including an R—Fe—B based alloy which contains 28 to 45 percent by mass of R element (where R represents at least one type of rare-earth lanthanide elements) and which is physically formed into a film, wherein the R—Fe—B based alloy has a composite texture composed of R2Fe14B crystals having a crystal grain diameter of 0.5 to 30 μm and R-element-rich grain boundary phases present at boundaries between the crystals. The magnetization characteristics of the thin film magnet are improved. The R—Fe—B based thin film magnet can be prepared by heating to 700° C. to 1,200° C. during physical film formation or/and the following heat treatment, so as to grow crystal grains and form R-element-rich grain boundary phases.
Public/Granted literature
- US20070199623A1 R-Fe-B Based Thin Film Magnet And Method For Preparation Thereof Public/Granted day:2007-08-30
Information query