Invention Grant
- Patent Title: Method of trimming semiconductor elements with electrical resistance feedback
- Patent Title (中): 用电阻反馈修整半导体元件的方法
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Application No.: US12027916Application Date: 2008-02-07
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Publication No.: US07790518B2Publication Date: 2010-09-07
- Inventor: Bomy Chen , Ya-Fen Lin , Zhitang Song , Songlin Feng
- Applicant: Bomy Chen , Ya-Fen Lin , Zhitang Song , Songlin Feng
- Applicant Address: US CA Sunnyvale
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: DLA Piper LLP (US)
- Main IPC: H01L21/82
- IPC: H01L21/82

Abstract:
A method of trimming down the volume of a semiconductor resistor element using electrical resistance feedback. After forming conductive material disposed between a pair of electrodes, a voltage is applied to the electrodes to produce an electrical current through the conductive material sufficient to heat and melt away a portion of the conductive material. By reducing the volume of the conductive material, its resistance is increased. The application of the voltage is ceased once the desired dimensions (and thus resistivity) of the conductive material is reached. The resulting semiconductor resistor element could have a fixed resistance, or could have a variable resistance (by using phase change memory material).
Public/Granted literature
- US20080131982A1 Method Of Trimming Semiconductor Elements With Electrical Resistance Feedback Public/Granted day:2008-06-05
Information query
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