- Patent Title: Defect-free hybrid orientation technology for semiconductor devices
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Application No.: US12543630Application Date: 2009-08-19
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Publication No.: US07790522B2Publication Date: 2010-09-07
- Inventor: Louis C. Hsu , Rajiv V. Joshi , Xu Ouyang
- Applicant: Louis C. Hsu , Rajiv V. Joshi , Xu Ouyang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Brian Verminski, Esq.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A semiconductor device includes a semiconductor material having two crystal orientations. The semiconductor material forms an active area of the device. A device channel is formed on the two crystal orientations, which include a first region formed in a first crystal orientation surface of the semiconductor material, and a second region formed in a second crystal orientation surface of the semiconductor material wherein the first crystal orientation surface forms an angle with the second crystal orientation surface and the device channel covers at least an intersection of the angle.
Public/Granted literature
- US20090305472A1 DEFECT-FREE HYBRID ORIENTATION TECHNOLOGY FOR SEMICONDUCTOR DEVICES Public/Granted day:2009-12-10
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