Invention Grant
- Patent Title: Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
- Patent Title (中): 激光照射方法,激光照射装置以及半导体装置的制造方法
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Application No.: US10582614Application Date: 2005-06-15
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Publication No.: US07790533B2Publication Date: 2010-09-07
- Inventor: Koichiro Tanaka , Yoshiaki Yamamoto
- Applicant: Koichiro Tanaka , Yoshiaki Yamamoto
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-180574 20040618
- International Application: PCT/JP2005/011401 WO 20050615
- International Announcement: WO2005/124842 WO 20051229
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84

Abstract:
The present invention is to provide a technique that can increase productivity with high output power by combining a plurality of laser beams on an irradiation surface without any difficulties in optical alignment. According to this technique, laser beams having different wavelengths are combined using a plurality of laser oscillators and a dichroic mirror, or additionally a polarizer. For example, a first laser beam emitted from a first laser oscillator is combined with a second laser beam emitted from a second laser oscillator having different wavelength from the first laser beam in such a way that the first laser beam passes through a dichroic mirror and the second laser beam is reflected on the dichroic mirror, and the combined laser beam is projected to an irradiation surface.
Public/Granted literature
- US20070166965A1 Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device Public/Granted day:2007-07-19
Information query
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