Invention Grant
US07790536B2 Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structures
有权
在量子阱结构中使用掺杂剂分离势垒的δ掺杂层中的掺杂剂约束
- Patent Title: Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structures
- Patent Title (中): 在量子阱结构中使用掺杂剂分离势垒的δ掺杂层中的掺杂剂约束
-
Application No.: US12538828Application Date: 2009-08-10
-
Publication No.: US07790536B2Publication Date: 2010-09-07
- Inventor: Mantu K. Hudait , Aaron A. Budrevich , Dmitri Loubychev , Jack T. Kavalieros , Suman Datta , Joel M. Fastenau , Amy W. K. Liu
- Applicant: Mantu K. Hudait , Aaron A. Budrevich , Dmitri Loubychev , Jack T. Kavalieros , Suman Datta , Joel M. Fastenau , Amy W. K. Liu
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/337
- IPC: H01L21/337
Abstract:
A device grade III-V quantum well structure and method of manufacture is described. Embodiments of the present invention enable III-V InSb quantum well device layers with defect densities below 1×108cm−2 to be formed. In an embodiment of the present invention, a delta doped layer is disposed on a dopant segregation barrier in order to confine delta dopant within the delta doped layer and suppress delta dopant surface segregation.
Public/Granted literature
Information query
IPC分类:
