Invention Grant
US07790544B2 Method of fabricating different gate oxides for different transistors in an integrated circuit
有权
在集成电路中制造用于不同晶体管的不同栅极氧化物的方法
- Patent Title: Method of fabricating different gate oxides for different transistors in an integrated circuit
- Patent Title (中): 在集成电路中制造用于不同晶体管的不同栅极氧化物的方法
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Application No.: US11387707Application Date: 2006-03-24
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Publication No.: US07790544B2Publication Date: 2010-09-07
- Inventor: Xianfeng Zhou
- Applicant: Xianfeng Zhou
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238
Abstract:
An integrated circuit and gate oxide forming process are disclosed which provide a gate structure that is simple to integrate with conventional fabrication processes while providing different gate oxide thicknesses for different transistors within the integrated circuit. For a flash memory, which may utilize the invention, the different gate oxide thicknesses may be used for lower voltage transistors, memory array transistors, and higher voltage transistors.
Public/Granted literature
- US20070224746A1 Method and apparatus providing different gate oxides for different transitors in an integrated circuit Public/Granted day:2007-09-27
Information query
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