Invention Grant
US07790565B2 Semiconductor on glass insulator made using improved thinning process
失效
使用改进的薄化工艺制成的玻璃绝缘体上的半导体
- Patent Title: Semiconductor on glass insulator made using improved thinning process
- Patent Title (中): 使用改进的薄化工艺制成的玻璃绝缘体上的半导体
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Application No.: US11729895Application Date: 2007-03-29
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Publication No.: US07790565B2Publication Date: 2010-09-07
- Inventor: Kishor Purushottam Gadkaree , Michael John Moore , Mark Andrew Stocker , Jiangwei Feng , Joseph Frank Mach
- Applicant: Kishor Purushottam Gadkaree , Michael John Moore , Mark Andrew Stocker , Jiangwei Feng , Joseph Frank Mach
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent Bruce P. Watson; Timothy M. Schaeberle
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.
Public/Granted literature
- US20070249139A1 Semiconductor on glass insulator made using improved thinning process Public/Granted day:2007-10-25
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