Invention Grant
- Patent Title: Semiconductor storage device, semiconductor device, and manufacturing method therefor
- Patent Title (中): 半导体存储装置，半导体装置及其制造方法
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Application No.: US11398534Application Date: 2006-04-06
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Publication No.: US07790579B2Publication Date: 2010-09-07
- Inventor: Kohji Kanamori , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
- Applicant: Kohji Kanamori , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2004-070537 20040312
- Main IPC: H01L21/322
- IPC: H01L21/322
Abstract:
According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
Public/Granted literature
- US20060180891A1 Semiconductor storage device, semiconductor device, and manufacturing method therefor Public/Granted day:2006-08-17
Information query
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