Invention Grant
- Patent Title: Method for fabricating polysilicon liquid crystal display device
- Patent Title (中): 制造多晶硅液晶显示装置的方法
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Application No.: US11798474Application Date: 2007-05-14
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Publication No.: US07790582B2Publication Date: 2010-09-07
- Inventor: Kum-Mi Oh
- Applicant: Kum-Mi Oh
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge LLP
- Priority: KR10-2003-0099326 20031229
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
A method for fabricating a polysilicon liquid crystal display device includes: forming a first amorphous silicon layer on a substrate; forming a photoresist pattern on the first amorphous silicon layer; forming a second amorphous silicon layer over the photoresist pattern and the first amorphous silicon layer; defining a channel region on the first amorphous silicon layer; crystallizing the first and second silicon layers; forming an active layer by patterning the crystallized silicon layers; forming a first insulating layer on the active layer; forming a gate electrode on the first insulating layer; forming source and drain electrodes electrically connected to the active layer; and forming a pixel electrode electrically connected to the drain electrode.
Public/Granted literature
- US20070218576A1 Method for fabricating polysilicon liquid crystal display device Public/Granted day:2007-09-20
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