Invention Grant
US07790589B2 Method of providing enhanced breakdown by diluted doping profiles in high-voltage transistors
有权
通过高压晶体管中的稀释掺杂分布提供增强的击穿的方法
- Patent Title: Method of providing enhanced breakdown by diluted doping profiles in high-voltage transistors
- Patent Title (中): 通过高压晶体管中的稀释掺杂分布提供增强的击穿的方法
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Application No.: US11742404Application Date: 2007-04-30
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Publication No.: US07790589B2Publication Date: 2010-09-07
- Inventor: Paulus J. T. Eggenkamp , Priscilla W. M. Boos , Maarten Jacobus Swanenberg , Rob Van Dalen , Anco Heringa , Adrianus Willem Ludikhuize
- Applicant: Paulus J. T. Eggenkamp , Priscilla W. M. Boos , Maarten Jacobus Swanenberg , Rob Van Dalen , Anco Heringa , Adrianus Willem Ludikhuize
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L21/38
Abstract:
A method of fabricating high-voltage semiconductor devices, the semiconductor devices and a mask for implanting dopants in a semiconductor are described.
Public/Granted literature
- US20080265319A1 METHOD OF PROVIDING ENHANCED BREAKDOWN BY DILUTED DOPING PROFILES IN HIGH-VOLTAGE TRANSISTORS Public/Granted day:2008-10-30
Information query
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