Invention Grant
US07790616B2 Encapsulated silicidation for improved SiC processing and device yield
有权
用于改善SiC加工和器件产量的封装硅化物
- Patent Title: Encapsulated silicidation for improved SiC processing and device yield
- Patent Title (中): 用于改善SiC加工和器件产量的封装硅化物
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Application No.: US11896034Application Date: 2007-08-29
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Publication No.: US07790616B2Publication Date: 2010-09-07
- Inventor: Steven Mark Buchoff , Andrew Christian Loyd , Robert S. Howell
- Applicant: Steven Mark Buchoff , Andrew Christian Loyd , Robert S. Howell
- Applicant Address: US CA Los Angeles
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US CA Los Angeles
- Agency: Andrews Kurth LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/532
Abstract:
A method for producing a silicide contact. The method comprises the steps of depositing a metal on a SiC substrate; forming an encapsulating layer on deposited metal; and annealing said deposited metal to form a silicide contact. The encapsulating layer prevents agglomeration and formation of stringers during the annealing process.
Public/Granted literature
- US20090057906A1 Encapsulated silicidation for improved SiC processing and device yield Public/Granted day:2009-03-05
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