Invention Grant
- Patent Title: Selective slurry for chemical mechanical polishing
- Patent Title (中): 用于化学机械抛光的选择性浆料
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Application No.: US11019882Application Date: 2004-12-22
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Publication No.: US07790618B2Publication Date: 2010-09-07
- Inventor: Jinru Bian
- Applicant: Jinru Bian
- Applicant Address: US DE Newark
- Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Current Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Current Assignee Address: US DE Newark
- Agent Blake T. Biederman
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
An aqueous solution is useful for selective removal in the presence of a low-k dielectric. The aqueous solution comprises by weight percent 0 to 25 oxidizer; 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, the hydrophobic tail having 6 to 30 carbon atoms and the nonionic hydrophilic portion having 10 to 300 carbon atoms; 0 to 15 inhibitor for a nonferrous metal; 0 to 50 abrasive; 0 to 20 complexing agent for a nonferrous metal; and water.
Public/Granted literature
- US20060131275A1 Selective slurry for chemical mechanical polishing Public/Granted day:2006-06-22
Information query
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