Invention Grant
- Patent Title: Method for fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11311985Application Date: 2005-12-20
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Publication No.: US07790620B2Publication Date: 2010-09-07
- Inventor: Ki-Won Nam , Jae-Young Kim
- Applicant: Ki-Won Nam , Jae-Young Kim
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Priority: KR10-2004-0114172 20041228
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A method for fabricating a semiconductor device is provided. The method includes: forming device isolation layers on a substrate; sequentially forming an anti-reflective coating layer and a photoresist layer on the substrate; patterning the anti-reflective coating layer and the photoresist layer to expose substrate regions in which active regions of a metal oxide semiconductor (MOS) transistor will be formed; and recessing the exposed substrate regions in a predetermined thickness.
Public/Granted literature
- US20060141797A1 Method for fabricating semiconductor device Public/Granted day:2006-06-29
Information query
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