Invention Grant
- Patent Title: Methods for removing a metal-comprising material from a semiconductor substrate
- Patent Title (中): 从半导体衬底去除含金属材料的方法
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Application No.: US12174497Application Date: 2008-07-16
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Publication No.: US07790624B2Publication Date: 2010-09-07
- Inventor: Balgovind Sharma
- Applicant: Balgovind Sharma
- Applicant Address: KY Grand Cayman
- Assignee: Global Foundries Inc.
- Current Assignee: Global Foundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/44
Abstract:
Methods for removing metal-comprising materials from semiconductor materials are provided. In accordance with an exemplary embodiment, a method comprises providing a metal-comprising material overlying a semiconductor material and exposing the metal-comprising material to an aqueous non-chlorine-comprising acid solution having a pH of about less 7.
Public/Granted literature
- US20100015804A1 METHODS FOR REMOVING A METAL-COMPRISING MATERIAL FROM A SEMICONDUCTOR SUBSTRATE Public/Granted day:2010-01-21
Information query
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