Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film

Invention Grant

US07790627B2 Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film 有权

Title translation: 半导体装置及其制造方法以及金属化合物薄膜的制造方法

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Patent Title: Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film
Patent Title (中): 半导体装置及其制造方法以及金属化合物薄膜的制造方法
Application No.: US12001381

Application Date: 2007-12-11
Publication No.: US07790627B2

Publication Date: 2010-09-07
Inventor: Kunihiko Iwamoto , Toshihide Nabatame , Koji Tominaga , Tetsuji Yasuda
Applicant: Kunihiko Iwamoto , Toshihide Nabatame , Koji Tominaga , Tetsuji Yasuda
Applicant Address: JP
Assignee: Rohm Co., Ltd.
Current Assignee: Rohm Co., Ltd.
Current Assignee Address: JP
Agency: Cantor Colburn LLP
Priority: JP2003-083687 20030325
Main IPC: H01L21/8242
IPC: H01L21/8242 ; H01L21/4763 ; H01L21/461 ; H01L21/302 ; H01L21/469

Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film

Abstract:

A method of manufacturing a metal compound thin film is disclosed. The method may include forming a first metal compound layer on a substrate by atomic layer deposition, performing annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer, and forming a second metal compound layer on the first metal compound layer by atomic layer deposition.

Abstract(Chinese):

公开了一种制造金属化合物薄膜的方法。该方法可以包括通过原子层沉积在衬底上形成第一金属化合物层，在含有氮化合物气体的气氛中对第一金属化合物层进行退火，从而将氮扩散到第一金属化合物层中，并形成第二金属通过原子层沉积在第一金属化合物层上的化合物层。

Public/Granted literature

US20080166867A1 Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film Public/Granted day:2008-07-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）