Invention Grant
- Patent Title: Method of forming high dielectric constant films using a plurality of oxidation sources
- Patent Title (中): 使用多个氧化源形成高介电常数膜的方法
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Application No.: US11839699Application Date: 2007-08-16
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Publication No.: US07790628B2Publication Date: 2010-09-07
- Inventor: Robert D Clark , Lisa F Edge
- Applicant: Robert D Clark , Lisa F Edge
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A method is provided for depositing a high dielectric constant (high-k) film for integrated circuits (ICs) by atomic layer deposition (ALD) or chemical vapor deposition (CVD). The method includes exposing a substrate to one or more metal precursors and plurality of oxidation sources to deposit a high-k film with a desired thickness and tailored properties. The plurality of oxidation sources contain a first oxidation source containing H2O, H2O2, or a combination thereof, and a second oxidation source containing oxygen radicals (O), O3, or O2, or a combination of two or more thereof. The high-k film may contain one or more metal elements selected from alkaline earth elements, rare earth elements, and Group IVB elements of the Periodic Table of the Elements.
Public/Granted literature
- US20090047798A1 METHOD OF FORMING HIGH DIELECTRIC CONSTANT FILMS USING A PLURALITY OF OXIDATION SOURCES Public/Granted day:2009-02-19
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