Invention Grant
- Patent Title: Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
- Patent Title (中): 包括光电转换元件和高电位和低电位电极的半导体器件
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Application No.: US11898834Application Date: 2007-09-17
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Publication No.: US07791012B2Publication Date: 2010-09-07
- Inventor: Atsushi Hirose
- Applicant: Atsushi Hirose
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-268854 20060929
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
To suppress a decrease in photosensitivity of a photoelectric conversion element provided in a semiconductor device by reducing the parasitic resistance of an amplifier circuit. In addition, the amplifier circuit which amplifies the output current of the photoelectric conversion element is operated stably. A semiconductor device includes a photoelectric conversion element, a current mirror circuit having at least two thin film transistors, a high-potential power supply electrically connected to each of the thin film transistors, and a low-potential power supply electrically connected to each of the thin film transistors. When a reference thin film transistor is an n-type, the reference thin film transistor is placed closer to the low-potential power supply than an output thin film transistor is. When a reference thin film transistor is a p-type, the reference thin film transistor is placed closer to the high-potential power supply than an output thin film transistor is.
Public/Granted literature
- US20080078923A1 Semiconductor device Public/Granted day:2008-04-03
Information query
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