Invention Grant
- Patent Title: Ion implantation apparatus
- Patent Title (中): 离子注入装置
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Application No.: US12100973Application Date: 2008-04-10
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Publication No.: US07791049B2Publication Date: 2010-09-07
- Inventor: Mitsukuni Tsukihara , Yoshito Fujii
- Applicant: Mitsukuni Tsukihara , Yoshito Fujii
- Applicant Address: JP Tokyo
- Assignee: Sen Corporation an SHI and Axcelis Company
- Current Assignee: Sen Corporation an SHI and Axcelis Company
- Current Assignee Address: JP Tokyo
- Agency: Arent Fox LLP
- Priority: JP2007-103094 20070410
- Main IPC: H01J37/317
- IPC: H01J37/317 ; G21K5/04

Abstract:
A beam line before incidence on a beam scanner is arranged with an injector flag Faraday cup that detects a beam current by measuring a total beam amount of an ion beam to be able to be brought in and out thereto and therefrom. When the ion beam is shut off by placing the injector flag Faraday cup on a beam trajectory line, the ion beam impinges on graphite provided at the injector flag Faraday cup. At this occasion, even when the graphite is sputtered by the ion beam, since the injector flag Faraday cup is arranged on an upstream side of the beam scanner and the ion beam is shut off by the injector flag Faraday cup, particles of the sputtered graphite do not adhere to a peripheral member of the injector flag Faraday cup.
Public/Granted literature
- US20080251737A1 ION IMPLANTATION APPARATUS Public/Granted day:2008-10-16
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