Invention Grant
US07791053B2 Depressed anode with plasmon-enabled devices such as ultra-small resonant structures
有权
具有等离子体激元器件的抑郁阳极，如超小型谐振结构
- Patent Title: Depressed anode with plasmon-enabled devices such as ultra-small resonant structures
- Patent Title (中): 具有等离子体激元器件的抑郁阳极，如超小型谐振结构
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Application No.: US12247875Application Date: 2008-10-08
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Publication No.: US07791053B2Publication Date: 2010-09-07
- Inventor: Sidney E. Buttrill
- Applicant: Sidney E. Buttrill
- Applicant Address: US VI St. Thomas
- Assignee: Virgin Islands Microsystems, Inc.
- Current Assignee: Virgin Islands Microsystems, Inc.
- Current Assignee Address: US VI St. Thomas
- Agency: Davidson Berquist Jackson & Gowdey LLP
- Main IPC: H01L31/115
- IPC: H01L31/115 ; G01K1/08 ; H05H3/00
Abstract:
Plasmon-enable devices such as ultra-small resonant devices produce electromagnetic radiation at frequencies in excess of microwave frequencies when induced to resonate by a passing electron beam. The resonant devices are surrounded by one or more depressed anodes to recover energy from the passing electron beam as/after the beam couples its energy into the ultra-small resonant devices.
Public/Granted literature
- US20090230332A1 Depressed Anode With Plasmon-Enabled Devices Such As Ultra-Small Resonant Structures Public/Granted day:2009-09-17
Information query
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