Invention Grant
- Patent Title: Field effect transistor and method of producing same
- Patent Title (中): 场效应晶体管及其制造方法
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Application No.: US12493052Application Date: 2009-06-26
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Publication No.: US07791069B2Publication Date: 2010-09-07
- Inventor: Akane Masumoto , Daisuke Miura , Tomonari Nakayama
- Applicant: Akane Masumoto , Daisuke Miura , Tomonari Nakayama
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2004-087077 20040324
- Main IPC: H01L51/30
- IPC: H01L51/30 ; H01L51/40 ; C07D487/22

Abstract:
A field effect transistor is provided which comprises an organic semiconductor layer comprising a compound having a monobenzoporphyrin skeleton represented by the general formula (1): wherein R1 and R2 are independently selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, and alkyl, alkenyl, oxyalkyl, thioalkyl, alkyl ester and aryl groups each having 1 to 12 carbon atoms with the proviso that adjacent R1 may be the same or different and adjacent R2 may be the same or different and that at least two of R2 are not hydrogen atoms; R3 is a hydrogen atom or an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.
Public/Granted literature
- US20090263933A1 FIELD EFFECT TRANSISTOR AND METHOD OF PRODUCING SAME Public/Granted day:2009-10-22
Information query
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