Invention Grant
- Patent Title: Semiconductor device fault detection system and method
- Patent Title (中): 半导体器件故障检测系统及方法
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Application No.: US11264911Application Date: 2005-11-02
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Publication No.: US07791070B2Publication Date: 2010-09-07
- Inventor: Tai-Chun Huang , Chih-Hsiang Yao , Kuan-Shou Chi , Wen-Kai Wan
- Applicant: Tai-Chun Huang , Chih-Hsiang Yao , Kuan-Shou Chi , Wen-Kai Wan
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G01R31/26
- IPC: G01R31/26

Abstract:
An outer border, and a seal ring substantially co-extensive with and spaced from the outer border is disclosed. A plurality of fault detection chains extend from adjacent the outer border to within the seal ring. At least a first one of the plurality of fault detection chains includes a contact pad, a first metal feature coupled to the contact pad by a first via in a passivation layer, a second metal feature coupled to the first metal feature by a second via, and a substrate contact coupled to the second metal feature by a third via.
Public/Granted literature
- US20070096092A1 Semiconductor device fault detection system and method Public/Granted day:2007-05-03
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