Invention Grant
US07791074B2 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
有权
使用非晶氧化物膜作为沟道层的场效应晶体管，使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法，以及非晶氧化物膜的制造方法
- Patent Title: Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
- Patent Title (中): 使用非晶氧化物膜作为沟道层的场效应晶体管，使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法，以及非晶氧化物膜的制造方法
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Application No.: US11993456Application Date: 2006-09-05
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Publication No.: US07791074B2Publication Date: 2010-09-07
- Inventor: Tatsuya Iwasaki
- Applicant: Tatsuya Iwasaki
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2005-258263 20050906; JP2006-221552 20060815
- International Application: PCT/JP2006/317936 WO 20060905
- International Announcement: WO2007/029844 WO 20070315
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/15
Abstract:
An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.
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