Invention Grant
- Patent Title: Radiation-emitting semiconductor chip
- Patent Title (中): 辐射发射半导体芯片
-
Application No.: US11494984Application Date: 2006-07-28
-
Publication No.: US07791081B2Publication Date: 2010-09-07
- Inventor: Matthias Peter , Uwe Strausse , Matthias Sabathil
- Applicant: Matthias Peter , Uwe Strausse , Matthias Sabathil
- Applicant Address: DE Regensburg
- Assignee: Osram Opto Semiconductors GmbH
- Current Assignee: Osram Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Cohen Pontani Lieberman & Pavane LLP
- Priority: DE102005035721 20050729; DE102005048196 20051007
- Main IPC: H01L27/15
- IPC: H01L27/15
Abstract:
A radiation-emitting semiconductor chip is specified, comprising a semiconductor body (3) having an n-conducting region (4) and a p-conducting region (5), the semiconductor body having a hole barrier layer containing a material from the material system InyGa1-x-yAlxN.
Public/Granted literature
- US20100181583A1 RADIATION-EMITTING SEMICONDUCTOR CHIP Public/Granted day:2010-07-22
Information query
IPC分类:
