Invention Grant
- Patent Title: Nanowire tunneling transistor
- Patent Title (中): 纳米线隧道晶体管
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Application No.: US12161574Application Date: 2007-01-24
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Publication No.: US07791108B2Publication Date: 2010-09-07
- Inventor: Fred Hurkx , Prabhat Agarwal
- Applicant: Fred Hurkx , Prabhat Agarwal
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP06100816 20060125; WOPCT/IB2007/050241 20070124
- International Application: PCT/IB2007/050241 WO 20070124
- International Announcement: WO2007/086009 WO 20070802
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8235
Abstract:
A transistor comprises a nanowire (22, 22′) having a source (24) and a drain (29) separated by an intrinsic or lowly doped region (26, 28). A potential barrier is formed at the interface of the intrinsic or lowly doped region (26, 28) and one of the source (24) and the drain (29). A gate electrode (32) is provided in the vicinity of the potential barrier such that the height of the potential barrier can be modulated by applying an appropriate voltage to the gate electrode (32).
Public/Granted literature
- US20090008631A1 NANOWIRE TUNNELING TRANSISTOR Public/Granted day:2009-01-08
Information query
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