Invention Grant
- Patent Title: Circuit device and manufacturing method thereof
- Patent Title (中): 电路装置及其制造方法
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Application No.: US11082151Application Date: 2005-03-16
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Publication No.: US07791120B2Publication Date: 2010-09-07
- Inventor: Ryosuke Usui , Yasunori Inoue
- Applicant: Ryosuke Usui , Yasunori Inoue
- Applicant Address: JP Osaka
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Fish & Richardson P.C.
- Priority: JP2004-077237 20040317
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94

Abstract:
A manufacturing method of a circuit device that is formed by embedding a circuit in an insulating film is provided, the method including pressure bonding by a vacuum adhesion method on a first film a film that contains an insulating film between elements and is provided with a recess or a penetrated portion to adhere a second film 160 that constitutes a recess 190; embedding a pasty material of an element constituent member inside of the recess 190 by squeegeeing means such as a squeegee; and applying treatment such as drying to the material to form embedding members such as a high resistance member that becomes a resistor 180 and a high dielectric constant member 170 that constitutes a capacitor.
Public/Granted literature
- US20050205976A1 Circuit device and manufacturing method thereof Public/Granted day:2005-09-22
Information query
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