Invention Grant
- Patent Title: Method of making a deep junction for electrical crosstalk reduction of an image sensor
- Patent Title (中): 制造图像传感器的电串扰降低的深结的方法
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Application No.: US11456291Application Date: 2006-07-10
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Publication No.: US07791170B2Publication Date: 2010-09-07
- Inventor: Shang-Yi Chiang , Chung Wang , Shou-Gwo Wuu , Dun-Nian Yaung
- Applicant: Shang-Yi Chiang , Chung Wang , Shou-Gwo Wuu , Dun-Nian Yaung
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L25/065
- IPC: H01L25/065
Abstract:
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed on the front surface of the substrate, each of the plurality of sensor elements configured to receive light directed towards the back surface; and an aluminum doped feature formed in the substrate and disposed horizontally between two adjacent elements of the plurality of sensor elements and vertically between the back surface and the plurality of sensor elements.
Public/Granted literature
- US20080014673A1 METHOD OF MAKING A DEEP JUNCTION FOR ELECTRICAL CROSSTALK REDUCTION OF AN IMAGE SENSOR Public/Granted day:2008-01-17
Information query
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