Invention Grant
- Patent Title: Semiconductor device having multiple die redistribution layer
- Patent Title (中): 具有多个管芯再分配层的半导体器件
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Application No.: US11617687Application Date: 2006-12-28
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Publication No.: US07791191B2Publication Date: 2010-09-07
- Inventor: Hem Takiar , Shrikar Bhagath
- Applicant: Hem Takiar , Shrikar Bhagath
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device and methods of forming same are disclosed having multiple die redistribution layer. After fabrication of semiconductor die on a wafer and prior to singulation from the wafer, adjacent semiconductor die are paired together and a redistribution layer may be formed across the die pair. The redistribution layer may be used to redistribute at least a portion of the bond pads from the first die in the pair to a second die in the pair. One die in each pair will be a working die and the other die in each pair will be a dummy die. The function of the integrated circuit beneath the redistribution layer on the dummy die is at least partially sacrificed.
Public/Granted literature
- US20080157355A1 SEMICONDUCTOR DEVICE HAVING MULTIPLE DIE REDISTRIBUTION LAYER Public/Granted day:2008-07-03
Information query
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