Invention Grant
- Patent Title: Semiconductor device having a smaller electrostatic capacitance electrode
- Patent Title (中): 具有较小静电电容电极的半导体装置
-
Application No.: US11741532Application Date: 2007-04-27
-
Publication No.: US07791196B2Publication Date: 2010-09-07
- Inventor: Masakazu Ishino , Hiroaki Ikeda
- Applicant: Masakazu Ishino , Hiroaki Ikeda
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-122913 20060427
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/44

Abstract:
A semiconductor package includes a uniform thin insulating film covering the internal circuit formed on a silicon substrate. A plurality of thick island insulating films are formed underlying respective pad electrodes, which connect the internal circuit to an external circuit. The silicon substrate is polished from the bottom to have a thickness less than 0.6 mm. The thick island insulating films reduces an electrostatic capacitance of the pad electrodes to reduce the propagation delay of a signal passing through the pad electrodes.
Public/Granted literature
- US20070252273A1 SEMICONDUCTOR DEVICE HAVING A SMALLER ELECTROSTATIC CAPACITANCE ELECTRODE Public/Granted day:2007-11-01
Information query
IPC分类: