Invention Grant
US07791263B2 Electron emitting structure by field effect, with emission focussing
失效
电子发射结构通过场效应,具有发射聚焦
- Patent Title: Electron emitting structure by field effect, with emission focussing
- Patent Title (中): 电子发射结构通过场效应,具有发射聚焦
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Application No.: US12024455Application Date: 2008-02-01
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Publication No.: US07791263B2Publication Date: 2010-09-07
- Inventor: Jean Dijon
- Applicant: Jean Dijon
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0753086 20070206
- Main IPC: H01J17/49
- IPC: H01J17/49

Abstract:
An electron emitting structure that emits electrons by field effect, including: at least one electronic emission zone indicated by a cathode electrode positioned according to a first axis and an extraction gate electrode positioned in a second axis, with an electrical insulating layer separating the cathode electrode from the gate electrode, wherein the electronic emission zone includes a plurality of electron emitting elements electrically connected to the cathode electrode, wherein the electron emitting elements are disposed in rows in openings in the gate electrode and the electrical insulating layer, the gate openings are disposed in rows between two bands of the gate electrode; and focussing means for focusing electronic beams emitted by the electron emitting elements.
Public/Granted literature
- US20080203887A1 ELECTRON EMITTING STRUCTURE BY FIELD EFFECT, WITH EMISSION FOCUSSING Public/Granted day:2008-08-28
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