Invention Grant
- Patent Title: Semiconductor element and electrical apparatus
- Patent Title (中): 半导体元件和电气设备
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Application No.: US11996880Application Date: 2006-07-21
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Publication No.: US07791308B2Publication Date: 2010-09-07
- Inventor: Makoto Kitabatake , Osamu Kusumoto , Masao Uchida , Kenya Yamashita
- Applicant: Makoto Kitabatake , Osamu Kusumoto , Masao Uchida , Kenya Yamashita
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-214196 20050725
- International Application: PCT/JP2006/314489 WO 20060721
- International Announcement: WO2007/013367 WO 20070201
- Main IPC: H02P21/04
- IPC: H02P21/04 ; H02M3/335 ; H01L29/772
Abstract:
A semiconductor element (20) of the present invention includes a plurality of field effect transistors (90) and a schottky electrode (9a), and the schottky electrode (9a) is formed along an outer periphery of a region where the plurality of field effect transistors (90) are formed.
Public/Granted literature
- US20100148718A1 SEMICONDUCTOR ELEMENT AND ELECTRICAL APPARATUS Public/Granted day:2010-06-17
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