Invention Grant
US07791434B2 Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
有权
使用选择性金属蚀刻并在压电中具有沟槽的声谐振器性能增强
- Patent Title: Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
- Patent Title (中): 使用选择性金属蚀刻并在压电中具有沟槽的声谐振器性能增强
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Application No.: US11021085Application Date: 2004-12-22
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Publication No.: US07791434B2Publication Date: 2010-09-07
- Inventor: Ronald S. Fazzio , Hongjun Feng
- Applicant: Ronald S. Fazzio , Hongjun Feng
- Applicant Address: SG Singapore
- Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H03H9/15
- IPC: H03H9/15

Abstract:
An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, and a second electrode. The substrate has a first surface and the first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material, and the second electrode lies in a first plane and has an edge. The layer of piezoelectric material has a recessed feature adjacent the edge of the second electrode.
Public/Granted literature
- US20060132262A1 Acoustic resonator performance enhancement using selective metal etch Public/Granted day:2006-06-22
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