Invention Grant
- Patent Title: Etching solution for multiple layer of copper and molybdenum and etching method using the same
- Patent Title (中): 蚀刻溶液用于多层铜和钼的蚀刻方法使用
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Application No.: US12219446Application Date: 2008-07-22
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Publication No.: US07791573B2Publication Date: 2010-09-07
- Inventor: Seong-Su Kim , Yong-Suk Choi , Gee-Sung Chae , Gyoo-Chul Jo , Oh-Nam Kwon , Kyoung-Mook Lee , Yong-Sup Hwang , Seung-Yong Lee
- Applicant: Seong-Su Kim , Yong-Suk Choi , Gee-Sung Chae , Gyoo-Chul Jo , Oh-Nam Kwon , Kyoung-Mook Lee , Yong-Sup Hwang , Seung-Yong Lee
- Applicant Address: KR Seoul KR Seoul
- Assignee: LG Display Co., Ltd,Dongwoo Fine-Chem Co., Ltd.
- Current Assignee: LG Display Co., Ltd,Dongwoo Fine-Chem Co., Ltd.
- Current Assignee Address: KR Seoul KR Seoul
- Agency: McKenna Long & Aldridge
- Priority: KR10-2002-0079211 20021212; KR10-2003-0082375 20031119
- Main IPC: G09G3/36
- IPC: G09G3/36

Abstract:
An etching solution for a multiple layer of copper and molybdenum includes: about 5% to about 30% by weight of a hydrogen peroxide; about 0.5% to about 5% by weight of an organic acid; about 0.2% to about 5% by weight of a phosphate; about 0.2% to about 5% by weight of a first additive having nitrogen; about 0.2% to about 5% by weight of a second additive having nitrogen; about 0.01% to about 1.0% by weight of a fluoric compound; and de-ionized water making a total amount of the etching solution 100% by weight.
Public/Granted literature
- US20080286974A1 Etching solution for multiple layer of copper and molybdenum and etching method using the same Public/Granted day:2008-11-20
Information query
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