Invention Grant
US07791663B2 Image sensor and pixel that has positive transfer gate voltage during integration period
有权
积分期间具有正传输栅极电压的图像传感器和像素
- Patent Title: Image sensor and pixel that has positive transfer gate voltage during integration period
- Patent Title (中): 积分期间具有正传输栅极电压的图像传感器和像素
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Application No.: US10966137Application Date: 2004-10-15
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Publication No.: US07791663B2Publication Date: 2010-09-07
- Inventor: Howard E. Rhodes
- Applicant: Howard E. Rhodes
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H04N3/14
- IPC: H04N3/14 ; G03B7/00
Abstract:
A pixel and image sensor formed in accordance with the present invention has two modes of operation: a normal mode and a low light mode. The present invention switches from a normal to a low light mode based upon the amount of illumination on the image sensor. Once the level of illumination is determined, a decision is made by comparing the level of illumination to a threshold whether to operate in normal mode or low light mode. In low light mode, the reset transistor (for a 3T pixel) or the transfer transistor (for a 4T pixel) is biased positive.
Public/Granted literature
- US20060082667A1 Image sensor and pixel that has positive transfer gate voltage during integration period Public/Granted day:2006-04-20
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