A phase-change memory device includes a substrate having a contact region, an insulating interlayer on the substrate, a lower electrode electrically connected to the contact region, a phase-change material layer pattern formed on the lower electrode, and an upper electrode formed on the phase-change material layer pattern. The phase-change material layer pattern includes a chalcogenide compound doped with carbon and at least one of nitrogen and metal. The phase-change memory device may have a considerably reduced driving current without increasing a set resistance thereof. Further, the phase-change material layer pattern may have an increased crystallization temperature so as to ensure improved data retention characteristics of the phase-change memory device.