Invention Grant
- Patent Title: Non-volatile SRAM cell
- Patent Title (中): 非易失性SRAM单元
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Application No.: US11924801Application Date: 2007-10-26
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Publication No.: US07791941B2Publication Date: 2010-09-07
- Inventor: Hussein I. Hanafi
- Applicant: Hussein I. Hanafi
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
Methods, devices and systems for non-volatile static random access memory (SRAM) are provided. One method embodiment for operating an SRAM includes transferring data from a pair of static storage nodes of the SRAM to a pair of non-volatile storage nodes when the SRAM is placed in a standby mode. The method further includes transferring data from the pair of non-volatile storage nodes to the pair of static storage nodes when the SRAM exits the standby mode.
Public/Granted literature
- US20090109734A1 NON-VOLATILE SRAM CELL Public/Granted day:2009-04-30
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