Invention Grant
- Patent Title: Non-volatile memory device and methods of using
- Patent Title (中): 非易失性存储器件及其使用方法
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Application No.: US11972312Application Date: 2008-01-10
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Publication No.: US07791947B2Publication Date: 2010-09-07
- Inventor: Michael A. VanBuskirk , Colin S. Bill , Takao Akaogi
- Applicant: Michael A. VanBuskirk , Colin S. Bill , Takao Akaogi
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
The present disclosure adjusts the voltage threshold values of select gates of NAND strings. The select gates of the NAND string can be read, erased, and programmed.
Public/Granted literature
- US20090180330A1 NON-VOLATILE MEMORY DEVICE AND METHODS OF USING Public/Granted day:2009-07-16
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